{"id":34691,"date":"2022-10-01T23:50:37","date_gmt":"2022-10-01T23:50:37","guid":{"rendered":"https:\/\/dev.consapsg.com\/?p=34691"},"modified":"2026-06-02T09:20:05","modified_gmt":"2026-06-02T09:20:05","slug":"ultra-high-vaccum-metal-and-dielectric-sputtering","status":"publish","type":"post","link":"https:\/\/cde.nus.edu.sg\/e6nanofab\/ultra-high-vaccum-metal-and-dielectric-sputtering\/","title":{"rendered":"Ultra High Vacuum Metal and Dielectric Sputtering"},"content":{"rendered":"\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t\t\t
\n\t\t\t
<\/div>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t

ULTRA HIGH VACUUM METAL AND DIELECTRIC SPUTTERING <\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t\t\t
\n\t\t\t\n\t\t\t\t\t\t<\/span>\n\t\t<\/div>\n\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t\t\t\t\t

System Overview<\/strong><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

\n\t\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t
\n\t\t\t\t\t\t\t\t\t
  • Close proximity physical vapour deposition using magnetrons technology<\/li>
  • Target-to-substrate distance adjustable between 50-100mm.<\/li>
  • Accepts target size : 3.00″ Dia x 0.250″ Thick\u00a0<\/li>
  • Accepts various sample sizes and max 8\u201d wafer<\/li>
  • DC and RF sputter capability<\/li>
  • RF substrate bias with rotation<\/li>
  • Confocal sputtering available<\/li><\/ul>


    Targets<\/strong><\/p>

    IGZO, ITO, W, AI, Ta, Nb, SiO2, TiN<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

    \n\t\t\t
    \n\t\t\t\t\t\t
    \n\t\t\t\t
    \n\t\t\t\t\t\t\t\t\t

    \"\"<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

    \n\t\t\t\t\t\t
    \n\t\t\t\t\t
    \n\t\t\t
    \n\t\t\t\t\t\t
    \n\t\t\t\t
    \n\t\t\t\t\t\t\t\t\t
    Technical specification\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0<\/strong><\/div>
    • Substrate temperature up to 700\u00b0C on substrate, capable of being heated in an O2 environment<\/li>
    • PID temperature controller for substrate with +\/- 1 degree C temp. stability<\/li>
    • DC sputter power up to 1500W<\/li>
    • RF sputter power up to 600W@ 13.56 mHz<\/li>
    • Substrate RF bias 50W@ 13.56 mHz with rotation<\/li>
    • Process gases, Ar, N2, O2<\/li>
    • Metallic, oxide and composite targets<\/li>
    • Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6\u2033 wafer 1.5%, 8\u2033 wafer 5%<\/li><\/ul>


      Location:\u00a0<\/strong>E6-01-01, Cleanroom<\/p>

      Contact<\/strong>: e6nanofab@nus.edu.sg<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

      \n\t\t\t
      \n\t\t\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t<\/div>\n\t\t","protected":false},"excerpt":{"rendered":"

       <\/p>\n","protected":false},"author":4,"featured_media":28981,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"single-fullwidth.php","format":"standard","meta":{"footnotes":""},"categories":[42,50,41],"tags":[],"class_list":["post-34691","post","type-post","status-publish","format-standard","has-post-thumbnail","category-deposition-and-growth","category-l1-cr","category-the-capabilities"],"menu_order":1,"_links":{"self":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts\/34691","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/comments?post=34691"}],"version-history":[{"count":38,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts\/34691\/revisions"}],"predecessor-version":[{"id":42015,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts\/34691\/revisions\/42015"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/media\/28981"}],"wp:attachment":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/media?parent=34691"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/categories?post=34691"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/tags?post=34691"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}