{"id":34711,"date":"2022-12-28T22:46:32","date_gmt":"2022-12-28T22:46:32","guid":{"rendered":"https:\/\/dev.consapsg.com\/?p=34711"},"modified":"2026-07-23T08:47:03","modified_gmt":"2026-07-23T08:47:03","slug":"molecular-beam-epitaxy-mbe-system-for-the-growth-of-a-range-of-group-iii-v-ii-iv-materials","status":"publish","type":"post","link":"https:\/\/cde.nus.edu.sg\/e6nanofab\/molecular-beam-epitaxy-mbe-system-for-the-growth-of-a-range-of-group-iii-v-ii-iv-materials\/","title":{"rendered":"Molecular Beam Epitaxy (MBE) – ULVAC"},"content":{"rendered":"\t\t
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Molecular Beam Epitaxy (MBE) System for the Growth of a Range of Group III-V\/II-IV Materials<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t
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System Overview<\/strong><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t

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The fully integrated MBE system allows deposition of hetero-structures and semiconductors. IV and II-VI group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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Technical specifications<\/strong><\/p>

  • Available Material for Group IV: Si, C, Ge, Sn.<\/li>
  • Transition metal targets: Mo, W, Zr, Hf.<\/li>
  • Chalcogen targets: S, Se, Te.<\/li>
  • Base pressure: better than 5 x 10-10 Torr<\/li>
  • Effusion Cell for Chalcogen material up to 1300\u00baC (Si, Ge, Sn)<\/li>
  • Electron beam gun for evaporation of carbon<\/li>
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately
    7.5 x 10-11 Torr<\/li>
  • Substrate up to handle 2\u2033 wafer,<\/li>
  • Heating up to 1000 \u00baC with heating rate up to 20 \u00baC per minute<\/li>
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 \u03bcm, 30kV, Fluorescent screen: 90 mm diameter; bakeable up to 200 \u00baC<\/li><\/ul>


    Location:\u00a0<\/strong>E6-06-11<\/p>

    Contact<\/strong>: e6nanofab@nus.edu.sg<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

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     <\/p>\n","protected":false},"author":4,"featured_media":35134,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"single-fullwidth.php","format":"standard","meta":{"footnotes":""},"categories":[42,72,59,41],"tags":[114],"class_list":["post-34711","post","type-post","status-publish","format-standard","has-post-thumbnail","category-deposition-and-growth","category-drylab-deposition","category-mbe","category-the-capabilities","tag-molecular-beam-epitaxy-mbe-ulvac"],"menu_order":1,"_links":{"self":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts\/34711","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/users\/4"}],"replies":[{"embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/comments?post=34711"}],"version-history":[{"count":11,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts\/34711\/revisions"}],"predecessor-version":[{"id":42573,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/posts\/34711\/revisions\/42573"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/media\/35134"}],"wp:attachment":[{"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/media?parent=34711"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/categories?post=34711"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/cde.nus.edu.sg\/e6nanofab\/wp-json\/wp\/v2\/tags?post=34711"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}