Furnace system for wet and dry oxidation in the temperature range of 200 to 1200 °C 

• Deposition: SiO2

• Substrate Size: 8 inch wafer only. 

• Product yield: 40 wafer/ run max. 

• Heater temp: 200 to 1200 °C. 

• Heater zone: 1 to 3 zone. 

• Process uniformity – Refractive Index : 1.46 ≤±0.01@1000 nm (WIW, WTW, RTR)
                                                                 (edge exclusion is 10mm)
                                 – Wet oxidation    : 1000 nm≤±1% (WIW, WTW, RTR)

Location: E6-01-01, Cleanroom

Contact: Patrick TANG
               Email: patrick@nus.edu.sg
               Tel: 660 17029 / 6601 7041