ULTRA HIGH VACUUM METAL AND DIELECTRIC SPUTTERING
System Overview
- Close proximity physical vapour deposition using magnetrons technology
- Target-to-substrate distance adjustable between 50-100mm.
- Accepts 3” diameter target size
- Accepts various sample sizes and max 8” wafer
- DC and RF sputter capability
- DC and RF substrate bias with rotation
- Confocal sputtering available
Targets
Ti, Mo, W, SiO2, Pt, ZnO
Technical specification
- Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
- PID temperature controller for substrate with +/- 1 degree C temp. stability
- DC sputter power up to 1500W
- RF sputter power up to 600W@ 13.56 mHz
- Substrate RF bias 110W@ 13.56 mHz with rotation
- Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
- Process gases, Ar, N2, O2
- Metallic, oxide and composite targets
- Build in RHEED for film deposition monitor
- Build in RGA for leak detection
- Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%
Location: E6-01-01, Cleanroom
Contact: e6nanofab@nus.edu.sg