ULTRA HIGH VACUUM METAL AND DIELECTRIC SPUTTERING
System Overview
- Close proximity physical vapour deposition using magnetrons technology
- Target-to-substrate distance adjustable between 50-100mm.
- Accepts target size : 3.00″ Dia x 0.250″ Thick
- Accepts various sample sizes and max 8” wafer
- DC and RF sputter capability
- RF substrate bias with rotation
- Confocal sputtering available
Targets
IGZO, ITO, W, AI, Ta, Nb, SiO2, TiN
Technical specification
- Substrate temperature up to 700°C on substrate, capable of being heated in an O2 environment
- PID temperature controller for substrate with +/- 1 degree C temp. stability
- DC sputter power up to 1500W
- RF sputter power up to 600W@ 13.56 mHz
- Substrate RF bias 50W@ 13.56 mHz with rotation
- Process gases, Ar, N2, O2
- Metallic, oxide and composite targets
- Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%
Location: E6-01-01, Cleanroom
Contact: e6nanofab@nus.edu.sg