System overview

• Close proximity physical vapour deposition using magnetrons technology
• Target-to-substrate distance adjustable between 50-100mm.
• Accepts 3” diameter target size
• Accepts various sample sizes and max 8” wafer
• DC and RF sputter capability
• DC and RF substrate bias with rotation
• Confocal sputtering available

Targets

Ti, Mo, W, SiO2, Pt, ZnO

Technical specification           

• Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
• PID temperature controller for substrate with +/- 1 degree C temp. stability
• DC sputter power up to 1500W
• RF sputter power up to 600W@ 13.56 mHz
• Substrate RF bias 110W@ 13.56 mHz with rotation
• Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
• Process gases, Ar, N2, O2
• Metallic, oxide and composite targets
• Build in RHEED for film deposition monitor
• Build in RGA for leak detection
• Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%

Location: E6-01-01, Cleanroom

Contact: e6nanofab@nus.edu.sg