ELLIONIX ELECTRON BEAM LITHOGRAPHY (CLASS 10)
System Overview
The EBL system is used to directly write fine features in resist with feature’s line widths smaller than 8 nm. The system has a custom stage with 10mm of Z-axis travel for writing over curved surfaces. The system can handle small samples through 200mm (8 inch) wafers and 7″ x 7″ mask plates.
Technical specifications:
- Field sizes: 650um, 300um, 150um, and 75um
- Minimum linewidth: 10nm (with 75um field at 50kV)
- Minimum beam diameter: 2nm
- Beam current: 50pA – 1nA
- Stage movement range: (x: 150mm, y: 150mm, z: 5mm)
- Stage position resolution: (x,y: 1nm; z: 0.2um)
- Stitching accuracy: 75um field: <10nm; 150um field: <20nm
- Overlay accuracy: 30nm
Location: E6-01-01 Cleanroom, Class 10
Contact: e6nanofab@nus.edu.sg