The Integrated ICP Etch Cluster comprises Metal etch module, Dielectric etch module and III-V etch module. It is capable to handle 8” wafer with up to 8 mass flow controlled gas lines for each module.

1. THE METAL ETCH MODULE

• Metal etch module (W, Al, AlN tested)
• InP grating etch
• Cryo-cooled/electrically heated etch lower electrode, working temperature: -150 ºC – +400 ºC
• Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
• Bypassed gas line and MFC for toxic gas (Cl2, BCl3, HBr)
• External gaspod gas line heating kit for low vapour pressure gases (BCl3)
  
  

2. DIELECTRIC MODULE

• Standard gas line and MFC for nontoxic gases (SF6, Ar, O2, N2, C4F8, CHF3)
• Bypassed gas line and MFC for toxic gas (Cl2)
  
  

3. III-V ETCH MODULE

• Cryo-cooled/electrically heated etch lower electrode, working temperature:   -150ºC-+400 ºC
• Rapid cooling from cryo to chiller mode, from 200°C to 20°C in 40 minutes
• Standard gasline and MFC for nontoxic gases (SF6, Ar, O2, N2)
• Bypassed gas line and MFC for toxic gas (Cl2, BCl3, H2, CH4)
• External gaspod gas line heating kit for low vapour pressure gases (BCl3)

Location: E6-05-09, Cleanroom

Contact: e6nanofab@nus.edu.sg