• Model TFS 200

• Precursor: TDMAHf, TEMAZr, Ozone, H2O, TMA, SAM-24.

• Films: Al2O3, HfO2, ZrO2, HZO and SiO2.

• Up to 8” wafers size

• High aspect ratio depositions up to 2000:1

• Deposition uniformity: Al2O3 <=2%（12nm Al2O3 ，200nm Si-wafer with 5nm edge exclusion）

Location: E6-05-09, Cleanroom

Contact:  e6nanofab@nus.edu.sg