ATOMIC LAYER DEPOSITION (ALD)

• Deposition of Metal Nitrides, Oxides  
• Up to 8” wafers size
• Deposition uniformity:
  > Thermal Al2O3 <=2%
  > Plasma enhanced Al2O3 <=2%
• High aspect ratio depositions:
  > Thermal <= up to 2000:1
  > Plasma enhanced <= up to 50:1
• Target: Al2O3, HfO, ZrO and TiN

Location: E6-05-09, Cleanroom

Contact:  e6nanofab@nus.edu.sg