ATOMIC LAYER DEPOSITION (ALD)

• Deposition of Metal Nitrides, Oxides and sulphides
• Up to 8” wafers size
• Deposition uniformity:
  > Thermal Al2O3 – 1.5%
  > Plasma enhanced Al2O3 – 1.5%
• High aspect ratio depositions:
  > Thermal – up to 2000:1
  > Plasma enhanced – up to 50:1
• Target: Al2O3, HfO, ZrO and TiN

Location: E6-05-09, Cleanroom

Contact:  e6nanofab@nus.edu.sg