THE CAPABILITY
CLEANROOMS
DRY LAB
WET LAB
TOOL BOOKING

LIST OF TOOLS IN THE RESPECTIVE LOCATION

THERMAL EVAPORTOR 
Edward Evaporation System for Metal Deposition Model: Edward Auto 306 Turbo  Substrate size: Irregular to standard 8”dia wafer Metals: Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum. The Application: The heating is carried out by passing a large current through a filament container (tungsten boat or material coated tungsten rod), which has a finite electrical resistance. Location: E6-02-08, Dry Lab. Contact: e6nanofab@nus.edu.sg

 E-BEAM EVAPORTOR 
E-Beam Evaporation System for Metal Deposition Model: Edward Auto 306 Turbo Substrate size: Irregular to standard 8”dia wafer. Metals: Aluminum, Nickel, Titanium, Gold, Gold-Germanium, Palladium and Platinum. Crucibles: Intermetallic-IML, Graphite liner-GL and ThickWall Graphite Liner-TWGL. Location: E6-02-08, Dry Lab. Contact: e6nanofab@nus.edu.sg

FIB-SEM
System Overview
  • Process viewing Cut & See
  • Failure analysis
Technical Specifications
  • Up to 8” wafer inspection in both SESM as in FIB operation enable by the new triple lens design
  • Max Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
  • Integrated TOF-SIMS with a compact TOFSIMS dector and uses FIB column as primary ion beam with 3D compositional analysis
  • Magnification at 30kV: 4x-1,000,000x
  • Maximum Field of View: 4.3 mm at WD; analytical 5 mm; 7.5 mm at WD 30mm
  • Electron Beam Energy: 200 eV to 30 keV down to 50eV with Beam Deceleration mode
  • FIB Resolution : <2.5nm at 30kV (at SEM-FIB coincidence point)
  • Accelerating voltage: 0.5 kV to 30 kV
  • Ion Gun : Ga Liquid Metal Ion Source
  • Probe Current: 1 pA to 50 nA
  • FIB angle: 55 degree
  • Gas injection system : Tungsten and Platinum
  • Model: TESCAN GAIA3
Location: E6-03-02, Metrology Contact: e6nanofab@nus.edu.sg                             Quality of Patterned Resist

FE-SEM (Ultra High Resolution)
System Overview Multi-signal detection and imaging system, for elemental composition, crystal and surface information. Technical Specifications
  • Accelerating Voltage: 0.5 – 30kV
  • Resolution: 0.7nm at 15kV (SE) 0.9nm at 1kV w/ deceleration (SE)
  • Magnification Range: 20X – 2,000 X (Low Mag) 100X – 2,000,000X (High Mag)
  • Detectors: Lower/ Upper/ Top, YAG BSE, STEM (Bright-Field/ PD-Dark Field) and EDX.
  • Stage Traverse: (5-axis Motorized) X: 0 – 110mm Y: 0 – 11mm Z: 1.5 – 40mm R: 360° T: -5° – +70°
  • Observable Range: 150mm dia. (MAX Sample Size)
  • Specimen Exchange Chamber size: 6 inch dia.
  • Mountable specimen thickness: 27mm (Diameter ≦ 33mm)
  • Model: Hitachi Regulus 8230
Location: E6-03-02, Metrology Contact: e6nanofab@nus.edu.sg

 High Resolution Imaging  

 

JEOL JSM 6700F
System Overview FESEM JSM-6700F is a high-resolution and easy-to-operate scanning  electron microscope, which employs a field-emission gun for the electron source and state-of-the-art computer technology for the image-display system. This system detects the secondary electrons to image the topography of the sample. The minimum feature is around 50nm. Location: E6-03-02, Metrology Contact: e6nanofab@nus.edu.sg

NOVA NANOSEM 230
System Overview A wide range of materials can be imaged which includes semiconductor devices, thin films and even non-conductive specimens.
  • Brand:  FEI NOVA NANOSEM 230
  • Minimum feature :  ~ 50nm
  • Detector:  SED, GBSD, BSD
  • Stage:  X, Y, Z, R Axis motor drive
  • Beam landing energy:  50 V – 30 kV
  • Probe current: 0.6 pA – 100 nA
  • Tilt:  Manual
Location: E6-03-02, Metrology Contact: e6nanofab@nus.edu.sg

                                        Amorphous Si Image

RAMAN AND MICRO PL SYSTEM
System Overview The Raman microscope acquire detailed chemical images and highly specific Raman data from discrete points. It analyses both large volumes and traces of material.
  • Dual laser system: 532nm & 325nm.
  • Able to measure both Raman and Photoluminescence.
  • Map rough, uneven, and curved surfaces Transmission mapping – analyse large volumes of material and produce depth-averaged 2D images of material homogeneity.
  • Volume scans – 3D views of your transparent sample’s internal structure and see both the chemistry and the topography.
  • Renishaw inVia Raman
Location: E6-03-02 Contact: e6nanofab@nus.edu.sg

WAFER DICER
System Overview Dicing of full wafers up to 8" and piece-parts. A dicing saw employs a high-speed spindle fitted with an extremely thin diamond blade to dice or groove semiconductor wafers and other work pieces. Saws feature versatile processing capabilities, compact designs, and high precision and reliability. Users perform work-piece loading, alignment, and unloading automatically. Location: E6-03-02, Metrology Contact: e6nanofab@nus.edu.sg

VSM
System Overview The EZ 9 VSM is dedicated for measurement of the magnetic moment of materials as a function of field, angle, temperature, time.
  • Sensitivity up 10e-06emu
  • Achievable maximum magnetic field from 2.6 T to 3.12 T with sample space from 16mm to 3.5mm
  • Working temperature ranges from 77K to 1000K
  • Sample Size – Available measurement types for sample size are: Virgin Curve, Hysteresis Loop, IRM and Virgin Curve, DC Demagnetization, Combination Measurements, Angular Remanence, AC Remanence, Time Dependence, Temperature Scan, Torque and Miyajima Method
Location: E6-05-08G, Characterization Room Contact: e6nanofab@nus.edu.sg

SMOKE
System Overview By application of the magneto optical Kerr effect, the rotation of the polarization plane of the reflected light is transformed into a contrast by means of an analyser when the domain magnetization direction change. The E6NanoFab Evico Magneto-Optical Kerr Microscope & Magnetometer in is able to visualisation of magnetic domains and magnetization processes as well as for optically recording magnetization curves qualitatively on all kinds of magnetic materials, including bulk specimens like sheets or ribbons, magnetic films and multilayers, patterned films or micro- and nanowires. The In-plane magnetic field range from 10-4 Tesla up to 1.3 Tesla, depends on pole piece configuration and choice of coils. And the observation area is 8 mm x 8 mm min and 30 mm x 30 mm max. Location: E6-05-08A, Characterization Room Contact: e6nanofab@nus.edu.sg

SQUID
System Overview
  • The MPMS3 SQUID magnetometer allows DC and VSM Data Acquisition
  • Options of horizontal rotator allows for sample measurement as a function of angle
  • Manual insertion utility probe with 5 leads for variety resistivity measurement
  • Oven and high vacuum for high temperature measurement
  • AC susceptibility for magnetization dynamics measurement
  • Ultra-low field for superconductivity transition temperature and spin glass transition temperature measurement
Location: E6-05-08F, Characterization Room Contact: e6nanofab@nus.edu.sg

SPM
System Overview The Bruker Dimension Icon AFM incorporates the latest evolution of Bruker’s industry-leading nanoscale imaging and characterization technologies on a large sample tip-scanning AFM platform. The Icon’s temperature-compensating position sensors render noise levels in the sub-angstroms range for the Z-axis, and angstroms in X-Y. Technical Specifications
  • ScanAsyst® Imaging – ScanAsyst is a PeakForce Tapping based image optimization technique that enables every user to create the highest resolution AFM images using single-touch scanning.
  • Conventional Tapping Mode – for topology/roughness/step-height measurements
  • Magnetic Force Microscopy (MFM) –  can be used to image both naturally occurring and deliberately written domain structures in magnetic materials
  • Electric Force Microscopy (EFM) – is used for electrical failure analysis, detecting trapped charges, mapping electric polarization, and performing electrical read/write, among other applications.
  • Kelvin Probe Force Microscopy (KPFM) – is widely used for analysing the surface potential of the structures.
  • Conductive AFM (CAFM) – used to measure and map current of the sample in the 2pA to 1µA range while simultaneously collecting topographic information.
Location: E6-05-08A, Characterization Room Contact: e6nanofab@nus.edu.sg

XRD
System Overview  Multipurpose XRD Technical Specifications
  • 3kW sealed tube
  • 0D, 1D detector
  • Horizontal Goniometer, independent and high resolution omega & 2theta (2θ) scan
  • Theta (θ) / 2θ accuracy and reproducibility: ≤0.02 on Si powder
  • Applications up to 4 inch: High-resolution XRD (HRXRD) or reciprocal space mapping (RSM) (1-D and O-D with analyzer);rocking curve; XRR, Grazing incidence; inplane grazing incidence, pole figure, SAXS, powder diffraction
  • Theta (θ) / 2θ up to 8 inch
Location: E6-05-08, Characterization Room Contact: e6nanofab@nus.edu.sg

WIRE BONDER
System Overview
  • Deep access 90º wire or ribbon feed, and single point tab/lead bonding
  • Programmable dual force (high or low), pure vertical Z, pneumatic braking of all axes during bonding, and radiant tool heat
Technical Specifications
  • Z tool range: 0.5625 inch
  • Z encoder resolution: 0.001 inch
  • Bond force range: Adjustable, 10 to 250 grams
  • Transducer: ½ wave, 63 KHz (nominal)
  • Ultrasonics: Built-in, 8 bit, 4 watts (Ultrasonic Positioning Utility)
  • Wire range: 0.7 to 2.0 mils, 1×10 mil gold ribbon
  • ESD protection: Protection against Electrostatic Discharge
  • Display: 4 line, 40 character LCD
  • Deep access tool length: 0.750 inch
Location: E6-05-Dry Lab, Level 5 Contact: e6nanofab@nus.edu.sg

MOLECULAR BEAM EPITAXY (MBE) SYSTEM FOR THE GROWTH OF A RANGE OF GROUP  II-VI and IV MATERIALS
System Overview The fully integrated MBE system allows deposition of hetero-structures and semiconductors. II-VI and IV group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber. Technical specifications:
  • Growth Chamber (Group II-VI)
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (S, Se, Te, P)
  • Electron beam gun for evaporation of transition metal (Mo, Ta, W, Hf, Zr)
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2 inch wafer
  • Heating up to1000ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC
MBE Growth Chamber (Group IV)
  • Base pressure: better than 5 x 10-10 Torr
  • Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
  • Electron beam gun for evaporation of carbon
  • Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately 7.5 x 10-11 Torr
  • Substrate up to handle 2inch wafer
  • Heating up to1000 ºC with heating rate up to 20 ºC per minute
  • Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90mm diameter; bakeable up to 200 ºC
Location: E6-06-01 Contact: e6nanofab@nus.edu.sg

  LASER MICRO-MACHINING SERVICE

 

Overview

Custom Laser micro-machine system operating on a femtosecond pulsed laser. The short pulse length limits local heating effects reducing Heat Affected Zone (HAZ). Applicable in wide range of materials. Especially effective for ceramics, metals and selected Polymers.

• Ceramics* : Alumina oxide, Aluminium nitride , etc • Wafers* : Silicon, Silicon Nitride, Silica (Glass), etc • Polymers : Polyamide, Kapton, PMMA etc. • Metals* : Stainless Steel, Copper, Aluminium etc.

We routinely perform and achieve the following precision: 1. 15 micron Percussion holes on ceramics, thin metals and silicon wafers with precision of <1 micron for ceramics. 2. 30 micron minimum Circular holes on ceramics, thin metals and silicon wafers with highest precision of <1micron for ceramics. 3. Smallest feature size > 20 microns with precision 1 micron on metal sheets, ceramics and polymers. 4. Dicing of Silicon wafer up to 750um thick with negligible dust on surface.

Remarks: Subjected to maximum material thickness between 500um ~ 700um*

  1. Ceramic Material

Electrodes for ion trapping: We provide blade electrodes for 3D ion traps based on ceramic materials. These are used for quantum information processing and atomic clock projects.

Sample: 50um slot milling on 250um thickness Alumina oxide.

Laser Micro-machining_Ceramics Materials               50um slot milling on 250um thickness Alumina oxide

2. Polymer Material Custom etching of heat sensitive Polymer material of approximately 50um thickness with features between 50um to 100um width.

Sample: Consistent output of 50um Polymer strip with 50um thickness material.

           

3. Metals Material

Sample A: Sepertine metal feature, 25um width strip on a 50um thickness Stainless Steel.

 Sample B: Micro laser etching on 1mm Titanium tube.
4.  Silicone Material
Sample A: Custom dicing of 525um thickness Silicon wafer with circuits. Custom dicing of 525um thickness Silicon wafer with circuits

Sample B:  Custom shape dicing of Silicon wafer of 525um thickness

Custom shape dicing of Silicon wafer of 525um thickness
5. Graphene Material

             Precision percussion holes on thin Graphene sheet.

 Sample: Precision percussion holes on thin Graphene sheet.

For quotation, please send your request to the person in charge stating your sample feature sizes, tolerances, volume, and materials.  Tel: 6516 8549 Email: joven@nus.edu.sg In Charge: Mr Joven Kwek