ELLIONIX ELECTRON BEAM LITHOGRAPHY (CLASS 10)

System Overview

The EBL system is used to directly write fine features in resist with feature’s line widths smaller than 8 nm. The system has a custom stage with 10mm of Z-axis travel for writing over curved surfaces. The system can handle small samples through 200mm (8 inch) wafers and 7″ x 7″ mask plates.


 

 

Technical specifications:

  • Field sizes: 650um, 300um, 150um, and 75um
  • Minimum linewidth: 10nm (with 75um field at 50kV)
  • Minimum beam diameter: 2nm
  • Beam current: 50pA – 1nA
  • Stage movement range: (x: 150mm, y: 150mm, z: 5mm)
  • Stage position resolution: (x,y:  1nm; z: 0.2um)
  • Stitching accuracy: 75um field: <10nm; 150um field: <20nm
  • Overlay accuracy: 30nm
  
 
 
 

               

 

 Location: E6-01-01 Cleanroom, Class 10

Contact: e6nanofab@nus.edu.sg