The EBL system is used to directly write fine features in resist with feature’s line widths smaller than 8 nm. The system has a custom stage with 10mm of Z-axis travel for writing over curved surfaces. The system can handle small samples through 200mm (8 inch) wafers and 7″ x 7″ mask plates.
Technical specifications:
Field sizes: 650um, 300um, 150um, and 75um
Minimum linewidth: 10nm (with 75um field at 50kV)
Minimum beam diameter: 2nm
Beam current: 50pA – 1nA
Stage movement range: (x: 150mm, y: 150mm, z: 5mm)