System Overview

• Process viewing Cut & See
• Failure analysis

Technical Specifications

• Up to 8” wafer inspection in both SESM as in FIB operation enable by the new triple lens design
• Max Specimen Height: 96 mm (with rotation stage); 137 mm (without rotation stage)
• Integrated TOF-SIMS with a compact TOFSIMS dector and uses FIB column as primary ion beam with 3D compositional analysis
• Magnification at 30kV: 4x-1,000,000x
• Maximum Field of View: 4.3 mm at WD; analytical 5 mm; 7.5 mm at WD 30mm
• Electron Beam Energy: 200 eV to 30 keV down to 50eV with Beam Deceleration mode
• FIB Resolution : <2.5nm at 30kV (at SEM-FIB coincidence point)
• Accelerating voltage: 0.5 kV to 30 kV
• Ion Gun : Ga Liquid Metal Ion Source
• Probe Current: 1 pA to 50 nA
• FIB angle: 55 degree
• Gas injection system : Tungsten and Platinum
• Model: TESCAN GAIA3

                            Quality of Patterned Resist

 Location: E6-03-02, Metrology

 Contact: e6nanofab@nus.edu.sg