horizontal FURNACE Ultech System Overview Furnace system for wet and dry oxidation in the temperature range of 200 to 1200 °C • Deposition: SiO2• Substrate Size: 8 inch wafer only. • Product yield: 40 wafer/ run max. • Heater temp: 200 to 1200 °C. • Heater zone: 1 to 3 zone. • Process uniformity – Refractive Index : 1.46 ≤±0.01@1000 nm (WIW, WTW, RTR) (edge exclusion is 10mm) – Wet oxidation : 1000 nm≤±1% (WIW, WTW, RTR) Location: E6-01-01, CleanroomContact: Patrick TANG Email: patrick@nus.edu.sg Tel: 660 17029 / 6601 7041