Molecular Beam Epitaxy (MBE) System for the Growth of a Range of Group III-V/II-IV Materials
System Overview
The fully integrated MBE system allows deposition of hetero-structures and semiconductors. IV and II-VI group deposition chambers are integrated with transfer chamber and load lock. The system has 5 ports for each chamber.
Technical specifications
- Available Material for Group IV: Si, C, Ge, Sn.
- Transition metal targets: Mo, W, Zr, Hf.
- Chalcogen targets: S, Se, Te.
- Base pressure: better than 5 x 10-10 Torr
- Effusion Cell for Chalcogen material up to 1300ºC (Si, Ge, Sn)
- Electron beam gun for evaporation of carbon
- Beam flux monitoring: Nude gauge type, 7.5 x 10-4 Torr to approximately
7.5 x 10-11 Torr - Substrate up to handle 2″ wafer,
- Heating up to 1000 ºC with heating rate up to 20 ºC per minute
- Reflection High Energy Electron Diffraction (RHEED): Filament Hair pin type with Electron beam diameter 90 μm, 30kV, Fluorescent screen: 90 mm diameter; bakeable up to 200 ºC
Location: E6-06-11
Contact: e6nanofab@nus.edu.sg
