• Handle up to 8” wafers size
• High density film deposition of Oxide, Nitride and amorphous Si
• Stress controlled SiN process
• 240mm diameter resistance heated aluminium electrode for
  temperatures up to 400°C, grounded
• Electrical chamber wall heating up to 80°C minimizing
  chamber wall deposition
  
  

Target: SiN, SiO2, Si