RAITH ULTRA PERFORMANCE ELECTRON BEAM LITHOGRAPHY
RAITH EPG5200
- Automated wafer and multi-sample exposures
- Automated exposure parameter switching and calibration, allowing seamless and stable switching between high throughput and high resolution
- Fast and error-free sample alignment
- Advanced fracturing modes for lowest line-edge roughness
Technical Specifications:
Nested structure with Pitch 20 nm & linewidth 5 nm
Dot structure with Pitch 20 nm & Dot 5 nm
Location: E6-01-01 Cleanroom
Contact: e6nanofab@nus.edu.sg