ULTRA HIGH VACUUM METAL AND DIELECTRIC SPUTTERING

System Overview

  • Close proximity physical vapour deposition using magnetrons technology
  • Target-to-substrate distance adjustable between 50-100mm.
  • Accepts 3” diameter target size
  • Accepts various sample sizes and max 8” wafer
  • DC and RF sputter capability
  • DC and RF substrate bias with rotation
  • Confocal sputtering available


Targets

Ti, Mo, W, SiO2, Pt, ZnO

Technical specification           
  • Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environment
  • PID temperature controller for substrate with +/- 1 degree C temp. stability
  • DC sputter power up to 1500W
  • RF sputter power up to 600W@ 13.56 mHz
  • Substrate RF bias 110W@ 13.56 mHz with rotation
  • Substrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)
  • Process gases, Ar, N2, O2
  • Metallic, oxide and composite targets
  • Build in RHEED for film deposition monitor
  • Build in RGA for leak detection
  • Uniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%


Location: 
E6-01-01, Cleanroom

Contact: e6nanofab@nus.edu.sg