ULTRA HIGH VACUUM METAL AND DIELECTRIC SPUTTERING System Overview Close proximity physical vapour deposition using magnetrons technology Target-to-substrate distance adjustable between 50-100mm. Accepts 3” diameter target size Accepts various sample sizes and max 8” wafer DC and RF sputter capability DC and RF substrate bias with rotation Confocal sputtering available Targets Ti, Mo, W, SiO2, Pt, ZnO Technical specification Substrate temperature up to 800°C on substrate, capable of being heated in an O2 environmentPID temperature controller for substrate with +/- 1 degree C temp. stabilityDC sputter power up to 1500WRF sputter power up to 600W@ 13.56 mHzSubstrate RF bias 110W@ 13.56 mHz with rotationSubstrate carrier 3″ working distance adjustment (incident ion energy from 50eV to 300eV)Process gases, Ar, N2, O2Metallic, oxide and composite targetsBuild in RHEED for film deposition monitorBuild in RGA for leak detectionUniformity: RF sputtering SiO2 and reactive sputtering TiN: 6″ wafer 1.5%, 8″ wafer 5%Location: E6-01-01, CleanroomContact: e6nanofab@nus.edu.sg