ULTRA HIGH VACUUM E-BEAM EVAPORATION

System Overview

  • Able to handle up to 8” wafers size
  • For deposition metals, dielectrics, super-lattices, alloys
  • Substrate heating up to 800°C capable of being heated in an O2 environment
  • Crystal deposition controller for co-deposition


Targets

SiO2, Pt, Al, Au, Ti, TiN, Pd,Ag


Technical specifications    

   

  • Chamber size:  36″ high x 24″ ID
  • 10 kW High Voltage Power Supplies for e-beam source Dual-beam covering 4 crucibles for co-deposition and multi-layer deposition
  • Thermal evaporation source with molybdenum resistive boats, 3kW Power Supply
  • Substrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)
  • PID temperature controller for substrate with +/- 1 degree C temperature stability
  • Build in RGA

 

Location: E6-01-01, Class 1000 cleanroom

Contact: e6nanofab@nus.edu.sg