ULTRA HIGH VACUUM E-BEAM EVAPORATION System Overview Able to handle up to 8” wafers sizeFor deposition metals, dielectrics, super-lattices, alloysSubstrate heating up to 800°C capable of being heated in an O2 environmentCrystal deposition controller for co-depositionTargetsSiO2, Pt, Al, Au, Ti, TiN, Pd,AgTechnical specifications Chamber size: 36″ high x 24″ ID10 kW High Voltage Power Supplies for e-beam source Dual-beam covering 4 crucibles for co-deposition and multi-layer depositionThermal evaporation source with molybdenum resistive boats, 3kW Power SupplySubstrate rotation and 300W RF/DC biasing (incident ion energies of 50 to 300 eV)PID temperature controller for substrate with +/- 1 degree C temperature stabilityBuild in RGA Location: E6-01-01, Class 1000 cleanroomContact: e6nanofab@nus.edu.sg