Congratulations to Ph.D. student Mr. Chien Yu-Chieh, supervised by Associate Professor Ang Kah-Wee from the Department of Electrical and Computer Engineering, who has won the Best Oral Presentation Award at the 2023 International Conference on Digital Devices and Computing (ICLED).
This conference aims to provide a unique forum for exchanging novel scientific information on all types of devices related to energy-efficient cloud and edge computing and emerging computing approaches. The team’s work on demonstrating a large memory window in molybdenum disulfide (MoS2) hafnium zirconium oxide (HfZrO) ferroelectric field-effect transistor, which was presented at the conference and was selected as the winner of the Best Oral Presentation Award.
The paper entitled “Large Memory Window in MoS2-Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistor” demonstrates a ferroelectric HfZrO gate stack with two-dimensional (2D) MoS2 channel, achieving a large memory window of ~ 11.5 V with an efficiency exceeding the theoretical limit. A metal-ferroelectric-metal-insulator-semiconductor (MFMIS) configuration is adopted to balance the charge compensation in the ferroelectric gate stack, exhibiting excellent endurance and retention characteristics of our Fe-FETs. This study highlights the potential promises to configure Fe-FET-based in-memory computing hardware for future neuromorphic computing applications.
