A research team from the National University of Singapore, led by Associate Professor Gong Xiao from the Department of Electrical and Computer Engineering, has received the Best Paper Award at the 9th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2025), held from March 9th to 12th, 2025, in Hong Kong, China. The award was presented to Ph. D student Xu Ying for her paper titled “BEOL-Compatible Multi-layer ITO-ZnO-ITO Channel FETs Achieving Enhanced Mobility, Positive VTH Shift, and Improved PBTI,” co-authored by Yiyuan Sun, Zijie Zheng, and Associate Professor Gong Xiao.
Established and sponsored by IEEE Electron Devices Society (EDS), EDTM is the premier event in Asia in the field of EDS. This year’s event was particularly notable as it featured a FET100 Forum, marking the 100-year anniversary of the Field-Effect Transistor (FET).
At the conference, Professor Gong’s team showcased their expertise in oxide semiconductor research by presenting two research papers, delivering a comprehensive tutorial talk, and giving an invited talk. Their presentations covered a broad spectrum of topics, from device physics and material engineering to advanced integration strategies, demonstrating their deep engagement in the field.
Their award-winning research focuses on a multi-layer oxide semiconductor field-effect transistor (FET) structure designed to enhance both device performance and reliability. These advancements are crucial for the development of next-generation ultra-high-density and energy-efficient 3D monolithic integrated circuits, which have significant applications in artificial intelligence (AI), high-performance computing, and other cutting-edge technologies.
This achievement further highlights the team’s impactful contributions to semiconductor device technology and underscores their growing recognition within the research community.
