Hyunsoo Yang earned his bachelor’s degree in electrical engineering from the Seoul National University in 1998 and M.S. and Ph.D. degrees in the electrical engineering department of Stanford University in 2003 and 2006, respectively. From 1988 he worked at a circuit and system design company, earning a patent award, until 2001, when he enrolled in Stanford’s graduate school on a scholarship from the Korean Ministry of Information and Communications. He had been working on long-wavelength photonic devices at Stanford university. Since 2004, he had been at IBM-Stanford Spintronic Science and Applications Center. His doctoral research focused on the metal spintronics, especially magnetic tunnel junctions for the magnetic random access memory application. He was awarded the fellowship in the conference on Magnetism and Magnetic Materials for 2005 and the American Physical Society (GMAG) outstanding dissertation award for 2006. He joined the National University of Singapore in the department of Electrical and Computer Engineering in 2007 and is working on various nanomaterials and devices for future electronic applications.
