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Congratulations to Ph.D. student Mr. HE Minghao, supervised by Associate Professor Ang Kah-Wee from the Department of Electrical and Computer Engineering, won the Best Presentation Award at the 2022 IEEE 5th International Conference on Electronics Technology (ICET) held on 13-16 May 2022..
The IEEE ICET conference focuses on the fields of micro/nanoelectronics technology and electronic packaging. It aims to provide a platform for senior and young scientists from academic communities and electronic industries from all over the world to exchange research ideas and share new knowledge related to their experimental and theoretical work. The team’s work on the merged P-i-N Schottky diode based on gallium oxide (Ga2O3) was presented at the conference and was selected as the winner for Best Presentation Award.
The paper entitled “Investigation of β-Ga2O3 Merged P-i-N Schottky Diode With Enhanced Breakdown Voltage and Low Turn-on Voltage” reports a method to improve the performance of gallium oxide power electronic device. Gallium oxide is emerging as the next generation wide bandgap semiconductor material. In this work, 75 nm of p-type NiOx is sputtered and patterned on the Ga2O3 anode side to form the merged P-i-N Schottky junction. The proposed structure shows ~74% improvement in breakdown voltage, as well as unaffected sub-threshold swing and low turn-on voltage, indicating both the inherited high voltage blocking capability from the P-i-N junction and fast switching property from the Schottky junction (ideality factor ~1.05). The influence of the design specs is discussed. The result features a solution to Ga2O3 device design and demonstrates potential in high power and fast switching applications.
