17 July 2019
Icicdt 2019

Best Paper Award – IEEE International Conference on IC Design and Technology 2019

A research work led by Assistant Professor Gong Xiao from the Department of Electrical and Computer Engineering at NUS clinched the Best Paper Award at the 2019 IEEE International Conference on IC Design and Technology held on June 17-19, 2019 in Suzhou, China.

The winning paper is entitled “Performance Evaluation of Static Random Access Memory (SRAM) based on Negative Capacitance FinFET”. This work was done by NUS ECE Ph.D. student Sun Chen.

The International Conference on IC Design and Technology (ICICDT) started at Grenoble, France in 2008 and is one of the most important international forums for interaction and collaboration of IC design and technology for “accelerating product time-to-market”. Close collaboration of the multi-discipline technical fields (design/device/process) accelerates the implementation of new designs and new technologies into manufacturing. In 2019, a total of 75 papers were accepted with ~40 for oral presentations. 2 papers were finally selected to win the Best Paper Award after rigorous selection based on the paper quality, the performance of oral presentation and Q&A sessions.

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