19 October 2023

Dual Honors Clinched by Associate Professor Gong Xiao’s Group at IEEE VLSI 2023 and ICICDT 2023

From left to right: Mr. Zheng Zijie, Associate Professor Gong Xiao, Dr. Han Kaizhen

Congratulations to Dr. Han Kaizhen and Mr. Zheng Zijie, under the guidance of Associate Professor Gong Xiao from the Department of Electrical and Computer Engineering, for their outstanding achievements at the 2023 IEEE Symposium on VLSI Technology and Circuit (VLSI 2023) and the 2023 IEEE International Conference on Integrated Circuit Design and Technology (ICICDT 2023).

At VLSI 2023 and ICICDT 2023, these premier events encompassing a wide array of subjects related to solid-state devices and circuits, the team showcased their groundbreaking research. Dr. Han’s work involved the development of innovative characterization methods for semiconductor materials, while Mr. Zheng’s contributions focused on enhancing the performance of flash memory through the ingenious use of anti-ferroelectric materials. Following meticulous evaluation of the paper quality and presentation excellence, these two works were recognized with the Best Demo Paper Award in VLSI 2023 and the Best Student Paper Award in ICICDT 2023, respectively.

It is worth noting that this marks the second time that Professor Gong Xiao’s research team has secured the Best Demo Paper Award at the IEEE Symposium on VLSI Technology and Circuit. This remarkable accomplishment solidifies the team’s position at the forefront of the global VLSI technology community.